JPH0228907B2 - - Google Patents

Info

Publication number
JPH0228907B2
JPH0228907B2 JP56197834A JP19783481A JPH0228907B2 JP H0228907 B2 JPH0228907 B2 JP H0228907B2 JP 56197834 A JP56197834 A JP 56197834A JP 19783481 A JP19783481 A JP 19783481A JP H0228907 B2 JPH0228907 B2 JP H0228907B2
Authority
JP
Japan
Prior art keywords
active layer
photodiode
type
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56197834A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898989A (ja
Inventor
Takeshi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56197834A priority Critical patent/JPS5898989A/ja
Publication of JPS5898989A publication Critical patent/JPS5898989A/ja
Publication of JPH0228907B2 publication Critical patent/JPH0228907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction

Landscapes

  • Light Receiving Elements (AREA)
JP56197834A 1981-12-09 1981-12-09 フオトダイオ−ド Granted JPS5898989A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197834A JPS5898989A (ja) 1981-12-09 1981-12-09 フオトダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197834A JPS5898989A (ja) 1981-12-09 1981-12-09 フオトダイオ−ド

Publications (2)

Publication Number Publication Date
JPS5898989A JPS5898989A (ja) 1983-06-13
JPH0228907B2 true JPH0228907B2 (en]) 1990-06-27

Family

ID=16381114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197834A Granted JPS5898989A (ja) 1981-12-09 1981-12-09 フオトダイオ−ド

Country Status (1)

Country Link
JP (1) JPS5898989A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0741168Y2 (ja) * 1988-09-13 1995-09-20 新日本無線株式会社 半導体受光素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931295A (en]) * 1972-07-21 1974-03-20
JPS5080793A (en]) * 1973-11-14 1975-07-01

Also Published As

Publication number Publication date
JPS5898989A (ja) 1983-06-13

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